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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC898 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A APPLICATIONS *Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i MAX 150 150 5 7 80 150 UNIT V V .cn mi e V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC898 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1A B 1.8 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain w w scs .i w IC= 1A; VCE= 5V .cn mi e 50 1.0 mA isc Websitewww.iscsemi.cn |
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